ds30292 rev. 5 - 2 1 of 3 mmbt123s www.diodes.com diodes incorporated mmbt123s 1a npn surface mount transistor epitaxial planar die construction ideal for medium power amplification and switching high collector current rating suitable as a low voltage high current driver available in lead free/rohs compliant version (note 2) characteristic symbol mmbt123s unit collector-base voltage v cbo 45 v collector-emitter voltage v ceo 18 v emitter-base voltage v ebo 5v collector current - continuous i c 1a power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a e j l top view m b c h g d k c b e mechanical data case: sot-23 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 5, on page 2 terminal connections: see diagram marking (see page 2): k6d ordering & date code information: see page 2 weight: 0.008 grams (approximate) t c u d o r p w e n notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad l ayout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. e b c sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm
ds30292 rev. 5 - 2 2 of 3 mmbt123s www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br)cbo 45 v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 18 v i c = 1ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5 v i e = 100 a, i c = 0 collector cutoff current i cbo 1 a v cb = 40v, i e = 0 emitter cutoff current i ebo 1 a v eb = 4v, i c = 0 on characteristics (note 3) dc current gain h fe 150 800 i c = 100ma, v ce = 1v collector-emitter saturation voltage v ce(sat) 0.5 v i c = 300ma, i b = 30ma small signal characteristics output capacitance c obo 8pf v cb = 10v, f = 1.0mhz, i e = 0 current gain-bandwidth product f t 100 mhz v cb = 10v, i e = 50ma, f = 100mhz t c u d o r p w e n notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free/rohs compliant version part number, please add "-f" suffix to the part number above. example : mmbt123s-7-f. device packaging shipping mmbt123s-7 sot-23 3000/tape & reel ordering information (note 4) k6d = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september k6d ym marking information date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprs tuvw notes: 3. short duration pulse test used to minimize self-heating effect.
ds30292 rev. 5 - 2 3 of 3 mmbt123s www.diodes.com 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 250 300 350 0 1 1000 100 0.0001 .001 .01 1 10 .1 h , dc current gain fe i , collector current (a) c fig. 2, typical dc current gain vs collector current v = 1.0v ce 1 100 10 0.1 1 10 100 c , output capacitance (pf) obo v , collector-base voltage (v) cb fig. 3, output capacitance vs. collector-base volta g e f = 1mhz 1 10 1000 100 0.0001 .001 .01 .1 1 10 v , collector-emitter ce (sat) saturation voltage (mv) i , collector current (a) c fig. 4, collector saturation voltage vs collector current t c u d o r p w e n
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